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| RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09520. Features * 4A, 50V and 60V * rDS(ON) = 0.800 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power-Dissipation Limited * Nanosecond Switching Speeds Ordering Information PART NUMBER RFP4N05L RFP4N06L PACKAGE TO-220AB TO-220AB BRAND RFP4N05L RFP4N06L * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-274 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP4N05L, RFP4N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage RGS = 20K (Note 1) . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 50 50 10 4 10 25 0.2 -55 to 150 300 260 RFP4N06L 60 60 10 4 10 25 0.2 -55 to 150 300 260 UNITS V V V A A W W/ oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 50 60 VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS, TC = 125oC 1 VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) 10 65 20 30 2 25 250 100 3.2 0.800 20 130 40 60 225 100 40 5 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP4N05L RFP4N06L Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 10V, VDS = 0 ID = 4A, VGS = 5V ID = 4A, VGS = 5V, (Figures 6, 7) ID 4A, VDD = 30V, RG = 6.25, RL = 7.5, VGS = 5V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 2A, dlSD/dt = 100A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 6-275 RFP4N05L, RFP4N06L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified 4.5 4.0 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 0.8 0.6 0.4 0.2 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 10V VGS = 7.5V 1 OPERATION IN THIS AREA LIMITED BY rDS(ON) 0.10 RFP4N05L RFP4N06L 0.01 VGS = 5V VGS = 4.5V VGS = 4V VGS = 3.5V VGS = 3V VGS = 2.5V VGS = 2V 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 7 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 6 5 4 3 2 1 -40oC 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 10V o o -40oC 25 C 125 C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V 125oC 25oC -40oC 125oC 2 4 ID, DRAIN CURRENT (A) 6 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-276 RFP4N05L, RFP4N06L Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 4A VGS = 5V NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 2.0 VGS = VDS ID = 250A 1.5 1.5 1.0 1.0 0.5 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 RL = 15 IG(REF) = 0.095mA VGS = 5V GATE SOURCE VDD = BVDSS VOLTAGE VDD = BVDSS 10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 300 8 45 6 200 CISS 30 4 15 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 100 COSS CRSS 2 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-277 RFP4N05L, RFP4N06L All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-278 |
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